MUN5316DW1T1 |
RFQ for MUN5316DW1T1 |
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| Technical/Catalog Information | MUN5316DW1T1G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 385mW |
| Resistor - Base (R1) (Ohms) | 4.7K |
| Resistor - Emitter Base (R2) (Ohms) | - |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| Packaging | Cut Tape (CT) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MUN5316DW1T1G MUN5316DW1T1G MUN5316DW1T1GOSCT ND MUN5316DW1T1GOSCTND MUN5316DW1T1GOSCT |
| Product | Manufacturers | Pack | D/C |
| MUN5316DW1T1 | - | - | - |